Concept of Photoactive Invisible Inks toward Ultralow‐Cost Fabrication of Transistor Photomemories

Finding the outperforming photoactive charge trapping materials for a new-trending transistor photomemory application is labor intensive, costly reagents and solvents, not to mention, inefficient energy time consumption. In this work, costless organic-based inks are introduced as novel storage material that inspired by high fluorescent ink of cheap invisible pens when exposed ultraviolet light. The pure powder with bright red greenish-yellow emission selected. estimated usage costs about $0.003 cm−2, confirming its ultralow-budget material. pentacene-based organic field-effect memory scheme employed evaluate behaviors. These invisible-ink-based layers endow device photoinduced recovery. Interestingly, conducting photoassisted operation on same device, threshold voltage shifts toward more positive direction, resulting in broaden window faster operations. On top that, demonstrates well-defined feasible multibit cell next-generation media. As result, employment commercial cheapest can favor advancement devices related functional applications.